报告人:Durgamadhab Misra,Electrical and Computer Engineering Department,New Jersey Institute of Technology, Newark, NJ 07102, USA。
Abstract:
Low power and high performance requirements in building nanosystems dictate integration of nanotechnology, optoelectronics and nanoelectronics involving nanoscale devices such as FinFETs in Complementary Metal Oxide Semiconductor (CMOS) technologies. Electrical performance in the nanoelectronics systems depends on different deposition process, precise selection of deposition parameters, predeposition surface treatments and subsequent annealing temperatures. These variations in process conditions significantly impact the nature of the dielectric-semiconductor interface that controls the speed of the transistor. In addition, building of optoelectronics and nanotechnology systems along with nanoelectronic systems remains a challenge. To attend the current trend in device scaling for sub-10 nm CMOS technology (More Moore) and integrating various nanotechnology functions along with electronic circuits (More than Moore) to build the nanosystem are the current trends in the industry. Research examples of various atomic layer deposition (ALD) methods of high-k gate dielectrics that are currently underway to enhance the dielectric constant and reliability will be discussed. To further enhance the device performance, various high mobility channel materials are currently being integrated.
About the Speaker
Prof. Durga Misra is a Professor in the Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, USA. His current research interests are in the areas of nanoelectronic/optoelectronic devices and circuits; especially in the area of nanometer CMOS gate stacks and device reliability. Prof. Misra received several research awards from the National Science Foundation, NASA, State of New Jersey and various Industries. He is currently a Distinguished Lecturer of IEEE Electron Devices Society (EDS) and serving in the IEE EDS Board of Governors. He has organized many IEEE International Conferences on Solid-State Science and Technology field and at the Technical Meetings of the Electrochemical Society. He is a Fellow of the Electrochemical Society (ECS) and served in the ECS Board as a Board Member (2008-10). He received the Thomas Collinan Award from the Dielectric Science & Technology Division of ECS. He is also the winner of the Electronic and Photonic Division Award from ECS. He edited and co-edited more than 40 books and conference proceedings in his field of research. He has published more than 200 technical articles in peer reviewed Journals and International Conference proceedings including 75 Invited Talks. He has graduated 17 PhD students and 35 MS students. He received the M.S. and Ph.D. degrees in electrical engineering from the University of Waterloo, Waterloo, ON, Canada, in 1985 and 1988, respectively.